DRAM capacitors are nearing their scaling limits, making it increasingly challenging to achieve the high capacitance required for device operation. To overcome this, higher-k materials must be developed through the atomic layer deposition (ALD) process. Ternary SrTiO₃ has been explored as a promising dielectric material for its high permittivity (>150) in thin film form. ALD is widely regarded as the only viable fabrication method for extreme three-dimensional microstructures. However, the ALD of multicomponent materials involves complex growth dynamics and interactions between constituent binary ALD processes, complicating precise control of film properties. Additionally, depositing the SrO binary layer remains particularly difficult due to the thermodynamically favorable SrCO₃ phase. This presentation will provide an overview of the history of ALD for Sr-based perovskite thin films and present recent findings on the synthesis of SrTiO₃ and SrRuO₃ thin films using SrF₂ ALD.